• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a semiconductor power control device (100) for an aircraft. The semiconductor power control device (100) includes a semiconductor switching apparatus (110) for activating an electrical power output bus (160), a control unit (120) for controlling semiconductor switching apparatus (110), and a current sensing circuit (150) for monitoring the current flowing in the electric power output bus (160). The current sensing circuit (150) includes a sense fuse (140) that makes the power control device (100) simpler and more reliable.
    公开号:FR3013525A1
    申请号:FR1461227
    申请日:2014-11-20
    公开日:2015-05-22
    发明作者:Julian Peter Mayes
    申请人:GE Aviation Systems Ltd；
    IPC主号:
    专利说明:

    [0001] The present invention relates generally to semiconductor power control devices (SSPCs) for aircraft. More particularly, the present invention relates to an improved device for protecting semiconductor power control devices of the type that is used in an aircraft.
    [0002] Semiconductor power control devices are known for use in different aircraft power systems [1 - 6]. However, recent guidance in the field of industry and certification has emphasized the need for all such SSPCs to have a fail-safe secondary isolation mechanism for the case of a component failure. primary switching provided in these devices, typically a field effect transistor (FET). One approach to providing such a fail-safe secondary isolation mechanism is to use a FET cell device to control the flow of current during normal operation and to limit the current under fault conditions. An FET cell device of this type is shown in FIG.
    [0003] In the FET cell device of Fig. 1, a power input line 12 is connected to the drain of an FET 10. The source of the FET 10 is connected to a low value detection resistor 40, at a first end. of it and a first input terminal of an operational amplifier 30. A second input terminal of the operational amplifier 30 is connected to a second end of the detection resistor 40, so that the The operational amplifier 30 can provide a signal at an output, which indicates voltage variations across the sense resistor 40 induced by a current flowing through the FET 10. The second end of the sense resistor 40 is also connected in series to a power output line 60 via a fuse 50. The power output line 60 may be used in an aircraft to drive different electrical charges which are connected to it. The output of the operational amplifier 30 is connected to a control unit 20, and the control unit 20 is further connected to the gate of the FET 10. The control unit 20 can act to turn the FET 10 on and off. The FET cell device thus constitutes an internal current measurement system used in a control loop for regulating the current drawn on the power input line 12 by the loads connected to the power output line 60 during operation. normal. In the case where the FET 10 fails to establish a short circuit between the source and the drain, or the control loop fails to effectively enable this operation, the current drawn by the loads can increase beyond the rated current for the fuse 50 and cause it to break. Thus, the FET cell device is also the desired failsafe secondary isolation mechanism. Although the known conventional FET cell device, which has been described above, offers a suitable solution for the current requirements in industry and certification, any improvements would be welcome in the state of the art. Accordingly, various aspects and embodiments of the present invention have been developed by the inventor.
    [0004] According to a first aspect of the present invention, there is thus provided a semiconductor power control device for an aircraft, comprising a semiconductor switching apparatus for activating a power supply bus, a control unit for controlling the semiconductor switching apparatus, and a current and protection detection circuit for monitoring the current flowing in the power supply bus. The current sensing circuit also includes a new sensing fuse that combines the functions of both a sensing resistor and a fuse into a single component. By using a detection fuse of this type, both the number of components and the heat radiation in a semiconductor power control device are reduced, which gives a better electrical efficiency, a greater reliability of operation and a reduction in weight and volume. Various additional advantages will be apparent to those skilled in the art in the detailed study of the various embodiments of the present invention which are described hereinafter. Some aspects and embodiments of the present invention will now be described with reference to the accompanying drawings, in which: - Figure 1 shows a conventional semiconductor power control device, using a FET cell device, - Figure 2 represents a semiconductor power control device according to various embodiments of the present invention; - Figure 3 is a detailed view of an aircraft semiconductor power control system, in accordance with Embodiment of the present invention, and FIG. 4 shows a detection fuse for use in various embodiments of the present invention.
    [0005] Fig. 2 shows a semiconductor power control device 100 according to different embodiments of the present invention. The semiconductor power control device 100 is of the FET cell type and comprises a power input line 112 connected in series with a FET 110, a current and protection detection circuit 150 and then a bus The output power bus 160 may be used in an aircraft to drive different electrical loads connected thereto.
    [0006] The FET 110 is controlled by a control unit 120 which derives a current detection signal from the current and protection detection circuit 150, and can be used to activate the power output bus 160. The current detection circuit and protection 150 includes a sense fuse 140 and a sensor amplifier 130. The power input line 112 is connected to a source terminal of the FET 110. A drain terminal of the FET 110 is connected to a first input terminal of the sensor amplifier 130 and a first terminal 141a of the detection fuse 140. The detection fuse 140 is connected in series between the source terminal of the FET 110 and the power output bus 160. A second input terminal of the sensor amplifier 130 is connected to both the power output bus 160 and a second terminal 141b of the sense fuse 140.
    [0007] An output signal from the sensor amplifier 130 is transmitted to the control unit 120 as a current detection signal. The control unit 120 may then be activated to control the FET 110 by applying a voltage signal to a gate of the FET 110 in response to this current detection signal.
    [0008] For example, the control unit 120 may be activated to turn the FET 110 on and off. In a normal operating current range, the detection fuse 140 has a substantially constant resistance that allows it to act as a sensor. The voltage across the sense fuse 140, which is produced by a current flowing through the FET 10 towards the loads, is amplified by the sensor amplifier 130 and is substantially proportional to the current. However, in the case where the detection fuse 140 is activated outside the normal operating current range, it behaves as a fuse rather than a sensor. Excessive current causes breakage of the detection fuse 140, for example by tripping or ohmic heating.
    [0009] It is possible to provide different types of fuses, for example that described below in connection with Figure 4. However, they all have specially adapted non-linear current responses that allow a single device to act both as a resistive sensor and a fuse, depending on the current they carry.
    [0010] For example, it is possible to provide a detection fuse which has a substantially stable resistance up to an operating temperature of about 100 ° C. A fuse of this type is designed so that, in case of breakage, the fragments are retained inside. Fig. 3 is a detailed view of an aircraft semiconductor power control system 300 according to an embodiment of the present invention. This aircraft semiconductor power control system 300 comprises a plurality of semiconductor power control devices 100 of the type shown in FIG. 2, connected in parallel. In the embodiment of FIG. 3, sixteen of these semiconductor power control devices 100 are provided, but those skilled in the art will readily understand that this number is in no way limiting. Connecting the semiconductor power control devices 100 in parallel provides higher current levels. Each semiconductor power control device 100 includes a respective pair of sense lines 152 which are connected across a respective sense fuse 140 and associated sense amplifiers 130. The respective control units 120 comprise a respective FET control and current limiting circuit 200 (also known as the FET control cell) and a gate resistor 122 coupled to the gates of the respective FETs 110. The power input line 112 is grounded through a transient suppression circuit 302. The power output bus 160 is electrically grounded through both a flywheel diode 304 and a passive biasing element 306. A reverse bias diode 308 is provided in parallel between the gate and the drain of at least one of the FETs 110, so as to create a protection against an electromagnetic field return for this one. A power supply unit 310 is provided in the semiconductor power control system 300. A 28-volt AC supply feeds a transformer into the power supply unit 310 which may be enabled to operate by first and second validation lines of SSPC 314, 416. A 20 volts supply is produced on an output line 318 of the power supply unit 310 and is used to power the control cells FET 200 and a converter. local voltage buckener 320 used to produce a local voltage of 3.3 volts. A processor 322 is provided for managing the settings of the aircraft semiconductor power control system 300, as well as for monitoring the operation thereof. External communications to and from the processor are provided by first and second RS485 communication buses 324 and 326, as well as via a configuration address bus 328. Other embodiments may utilize buses other than RS485. The processor 322 controls a digital-to-analog converter 334 used to set the respective FET control cell current limits 200. A control unit 336 is also connected to the processor 322 and is used to set the ON / OFF status of each respective semiconductor power control device 100.
    [0011] Each FET control cell 200 is connected to a current monitoring unit 338. This unit 338 is configured to produce a signal that is returned to the processor 322 which is then used to monitor the overall power control system current at half-full. driver 300 of the aircraft. A voltage monitoring unit 342 is also provided and coupled between the power input line 112 and the electrical power output bus 160. The voltage monitoring unit 342 is further configured to produce different signals that are returned. to processor 322 to be used as inputs for the control algorithm used therein. On the other hand, the monitoring of the FET 200 control cells is performed by an arc fault detector (AF) 340 and a regeneration detector 344. The regeneration detector 344 can be activated to detect a regenerative current when the current is inverted and flows from the output to the input. A grounding and BIT circuit 346 connects the processor 322 to the electrical power output bus 160. The grounding circuit component ensures that the output voltage is maintained at a reasonable level when the FET switches 110 are turned on. off. The BIT circuit component has a built-in-test function that ensures that each individual FET 110 works as intended. Fig. 4 shows a detection fuse 140 for use in various embodiments of the present invention. The sense fuse 140 includes first and second terminals 141a, 141b for connecting the sense fuse 140 to an external circuit. In different embodiments, it is possible to provide a detection fuse 140 which has a resistance ranging for example from about 3 to about 5 milliohms (me), with a tolerance of 2% or better, in a temperature range of operating up to about 100 ° C. In the illustrated embodiment, the first and second terminals 141a, 141b are substantially cup-shaped metal elements of the type which is known in the field of fuse manufacturing. For example, the cup-shaped metal elements may be part of a standard cartridge fuse. Thus, they can also be sized to fit into a standard fuse holder. The first and second terminals 141a, 141b are separated from each other and are carried by a cylindrical housing 142. This housing may be made of glass, ceramic or an insulating material, as is known in the field of the art.
    [0012] The first terminal 141a of the detection fuse 140 is connected to a first end of a fuse wire 143, by means of a seal 145. In various embodiments, the seal 145 is a solder joint (made for example by heating above 270 ° C) formed between the first terminal 141a and the fuse wire 143. Alternatively, the seal 145 may be formed by brazing at high temperature of the first terminal 141a and the fuse wire 143. For example, it is Brazing using high temperature solders, such as gold (Au), gold-tin (Au-Sn), gold-silicon (AuSi) and gold-germanium ( AuGe).
    [0013] A second end of the fuse wire 143 is connected to the second terminal 141b of the sense fuse 140 by means of another gasket 144. The gasket 144 is preferably formed using a low temperature solder. For example, a low temperature solder having a melting point of from about 50 ° C to about 150 ° C may be used. Examples of such low temperature solders may include indium-containing alloys containing bismuth, such as bismuth-tin (BiSn) provided in different proportions. The detection fuse 140 thus constitutes a two-component fusion element. One element exerts substantially all of the thermal fuse action (e.g. solder joint 144) and the other element provides substantially all of the resistance in the normal operating current range (e.g., fuse wire 143) . When the elements and materials in which they are made are carefully selected, the desired non-linear current response is obtained. In various embodiments, the fuse wire 143 comprises a high melting point material, such as copper or a copper alloy. A fuse wire of this type has relatively low temperature variations when operating in a relatively low current range compared to the nominal value. For example, when the fuse wire 143 is used at 10% of its rated current, its ohmic heating does not change the resistance of the sense fuse 140 sufficiently significantly to influence its performance as a sensing element. In addition, the fusible wire has a high melting point (eg copper melts at about 1085 ° C). Therefore, when used outside its normal operating range (for example, outside of 0 to 10% of the nominal value), the fuse wire 143 will heat up but not close enough to its own melting temperature. , while the solder will melt at a well defined and significantly lower temperature, to exert a melting action and open a circuit. Thus, different embodiments of detection fuses can be provided, which combine the functions of a detection resistor and a fuse in a single one-piece component, while at the same time reducing the heat dissipated produced, compared to devices conventional devices that use both a detection resistor and a separate fuse.
    [0014] Those skilled in the art will readily understand that many different embodiments of semiconductor power control devices are possible. For example, although embodiments of the present invention are described in connection with FET control cells, those skilled in the art will understand that the invention is not limited to these examples and that different power control devices semiconductor based on non-FET elements can be envisaged. Those skilled in the art will also understand that different embodiments of power supply and / or semiconductor power control systems can be implemented, which utilize such semiconductor power control devices. In addition, although specific embodiments of a detection fuse have been described in connection with FIG. 4, different detection fuses of this type will come to the mind of those skilled in the art upon reading this disclosure. . For example, a portion of the fuse wire may be connected to each of the first and second terminals by respective high temperature joints, its distal ends being connected by a third seal, at low temperature, made at a location between the first and the second. second terminal. Other arrangements of the sense wire are also possible.
    权利要求:
    Claims (8)
    [0001]
    REVENDICATIONS1. A semiconductor power control device for an aircraft, comprising: a semiconductor switching apparatus for activating a power supply bus; a control unit for controlling the semiconductor switching apparatus; and a current and protection detection circuit for monitoring the current flowing in the power supply bus, the current sensing circuit having a detection fuse.
    [0002]
    The semiconductor power control device according to claim 1, characterized in that the current and protection detection circuit further comprises a sensor amplifier for providing a detection signal to the control unit.
    [0003]
    A semiconductor power control device as claimed in any one of the preceding claims, characterized in that the detection fuse comprises a fuse wire member which is electrically and thermally connected to a solder joint.
    [0004]
    The semiconductor power control device according to claim 3, characterized in that the fusible wire element is made of copper or a copper alloy.
    [0005]
    A semiconductor power control device according to claim 3 or 4, characterized in that the solder joint is a low temperature solder having a melting point of from about 50 ° C to about 150 ° C .
    [0006]
    6. Aircraft semiconductor power control system, characterized in that it comprises a plurality of semiconductor power control devices as defined in any one of the preceding parallel claims.
    [0007]
    A method of controlling a semiconductor power control device in an aircraft, the method comprising: activating a semiconductor switching apparatus to supply power to a power bus; monitoring the current flowing in the power supply bus, by determining a voltage developed across a fuse detection; and controlling the semiconductor switching apparatus according to the monitored voltage.
    [0008]
    Method according to claim 7, characterized in that the control of the semiconductor switching apparatus as a function of the monitored voltage includes maintaining a current flowing through the detection fuse in a current range. predetermined normal operation.
    类似技术:
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    同族专利:
    公开号 | 公开日
    JP2015134596A|2015-07-27|
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    GB201320500D0|2014-01-01|
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    法律状态:
    2015-11-17| PLFP| Fee payment|Year of fee payment: 2 |
    2016-11-23| PLFP| Fee payment|Year of fee payment: 3 |
    2017-05-12| PLSC| Search report ready|Effective date: 20170512 |
    2017-11-27| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    GB1320500.0A|GB2520495A|2013-11-20|2013-11-20|Solid state power controller for an aircraft|
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